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| mm3z2b4~mm3zb75 silicon planar zener diodes features ? power dissipation: 300 mw ? zener voltage tolerance: 2% absolute maximum ratings (t a = 25 o c) parameter symbol value unit total power dissipation p tot 300 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r ja 417 o c/w forward voltage at i f = 10 ma v f 0.9 v anode 2 top view simplified outline sod-323 and symbol 1 2 pinning 1 pin cathode description 1 date:2011/05 www.htsemi.com semiconductor jinyu
type marking code zener voltage range 1) dynamic impedance reverse leakage current v znom l zt for v zt z zt (max.) at i zt i r (max.) at v r v ma v ? ma a v mm3z2b4 dn 2.4 5 2.352?2.448 100 5 120 1 mm3z2b7 dp 2.7 5 2.646?2.754 110 5 120 1 mm3z3b0 dr 3.0 5 2.94?3.06 120 5 50 1 mm3z3b3 dx 3.3 5 3.234?3.366 130 5 20 1 mm3z3b6 dy 3.6 5 3.528?3.672 130 5 10 1 mm3z3b9 dz 3.9 5 3.822?3.978 130 5 5 1 mm3z4b3 z0 4.3 5 4.214?4.386 130 5 5 1 mm3z4b7 eb 4.7 5 4.606?4.794 130 5 2 1 mm3z5b1 ec 5.1 5 4.998?5.202 130 5 2 1.5 mm3z5b6 ed 5.6 5 5.488?5.712 80 5 1 2.5 mm3z6b2 ee 6.2 5 6.076?6.324 50 5 1 3 mm3z6b8 ef 6.8 5 6. 664?6.936 30 5 0.5 3.5 mm3z7b5 eh 7.5 5 7.35?7.65 30 5 0.5 4 mm3z8b2 ej 8.2 5 8.036?8.364 30 5 0.5 5 mm3z9b1 ek 9.1 5 8.918?9.282 30 5 0.5 6 mm3zb10 em 10 5 9.8?10.2 30 5 0.1 7 MM3ZB11 en 11 5 10.78?11.22 30 5 0.1 8 mm3zb12 ep 12 5 11.76?12.24 35 5 0.1 9 mm3zb13 er 13 5 12.74?13.26 35 5 0.1 10 mm3zb15 ex 15 5 14.7?15.3 40 5 0.1 11 mm3zb16 ey 16 5 15.68?16.32 40 5 0.1 12 mm3zb18 ez 18 5 17.64?18.36 45 5 0.1 13 mm3zb20 fa 20 5 19.6?20.4 50 5 0.1 15 mm3zb22 fb 22 5 21.56?22.44 55 5 0.1 17 mm3zb24 fc 24 5 23.52?24.48 60 5 0.1 19 mm3zb27 fd 27 5 26.46?27.54 70 2 0.1 21 mm3zb30 fe 30 5 29.4?30.6 80 2 0.1 23 mm3zb33 ff 33 5 32.34?33.66 80 2 0.1 25 mm3zb36 fh 36 5 35.28?36.72 90 2 0.1 27 mm3zb39 fj 39 2.5 38.22?39.78 100 2 2 30 mm3zb43 xj 43 2.5 42.14?43.86 130 2 2 33 mm3zb47 xk 47 2.5 46.06?47.94 150 2 2 36 mm3zb51 xm 51 2.5 49.98?52.02 180 2 1 39 mm3zb56 xn 56 2.5 54.88?57.12 180 2 1 43 mm3zb62 xp 62 2.5 60. 76?63.24 200 2 0.2 47 mm3zb68 xr 68 2.5 66.64?69.36 250 2 0.2 52 mm3zb75 xx 75 2.5 73. 5?76.5 300 2 0.2 57 1) v z is tested with pulses (20 ms). ambient temperature: ta ( c) o 0 25 100 150 0 100 200 300 power dissipation: ptot (mw) derating curve mm3z2b4~mm3zb75 2 date:2011/05 www.htsemi.com semiconductor jinyu package outline plastic surface mounted package; 2 leads sod-323 a mm unit b d ce h e b a d a c h e p 1.10 0.80 0.40 0.25 0.15 0.10 1.80 1.60 1.35 1.15 2.80 2.30 e p mm3z2b4~mm3zb75 3 date:2011/05 www.htsemi.com semiconductor jinyu |
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